APTM20AM06SG APTM20AM06SG C rev 3 october, 2012 www.microsemi.com 1-7 out s1g2 s2 g1 q2 0/vbus vbus q1 absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 200 v t c = 25c 300 i d continuous drain current t c = 80c 225 i dm pulsed drain current 1200 a v gs gate - source voltage 30 v r dson drain - source on resistance 7.2 m ? p d maximum power dissipation t c = 25c 1250 w i ar avalanche current (repetitive and non repetitive) 24 a e ar repetitive avalanche energy 30 e as single pulse avalanche energy 1300 mj v dss = 200v r dson = 6m ? typ @ tj = 25c i d = 300a @ tc = 25c application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant phase leg series & parallel diodes mosfet power module downloaded from: http:///
APTM20AM06SG APTM20AM06SG C rev 3 october, 2012 www.microsemi.com 2-7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 200v t j = 25c 500 i dss zero gate voltage drain current v gs = 0v,v ds = 160v t j = 125c 2000 a r ds(on) drain C source on resistance v gs = 10v, i d = 150a 6 7.2 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 6ma 3 5 v i gss gate C source leakage current v gs = 30 v, v ds = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 18.5 c oss output capacitance 6.03 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.58 nf q g total gate charge 325 q gs gate C source charge 144 q gd gate C drain charge v gs = 10v v bus = 100v i d = 300a 156 nc t d(on) turn-on delay time 28 t r rise time 56 t d(off) turn-off delay time 81 t f fall time inductive switching @ 125c v gs = 15v v bus = 133v i d = 300a r g = 0.8 ? 99 ns e on turn-on switching energy 1543 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 133v i d = 300a, r g = 0.8 ? 1517 j e on turn-on switching energy 2027 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 133v i d = 300a, r g = 0.8 ? 1770 j series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 200 v t j = 25c 350 i rm maximum reverse leakage current v r =200v t j = 125c 600 a i f dc forward current t c = 85c 120 a i f = 120a 1.1 1.15 i f = 240a 1.4 v f diode forward voltage i f = 120a t j = 125c 0.9 v t j = 25c 31 t rr reverse recovery time t j = 125c 60 ns t j = 25c 120 q rr reverse recovery charge i f = 120a v r = 133v di/dt = 400a/s t j = 125c 500 nc downloaded from: http:///
APTM20AM06SG APTM20AM06SG C rev 3 october, 2012 www.microsemi.com 3-7 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 200 v t j = 25c 350 i rm maximum reverse leakage current v r =200v t j = 125c 600 a i f dc forward current t c = 85c 120 a i f = 120a 1.1 1.15 i f = 240a 1.4 v f diode forward voltage i f = 120a t j = 125c 0.9 v t j = 25c 31 t rr reverse recovery time t j = 125c 60 ns t j = 25c 120 q rr reverse recovery charge i f = 120a v r = 133v di/dt = 400a/s t j = 125c 500 nc thermal and package characteristics symbol characteristic min typ max unit transistor 0.10 series diode 0.46 r thjc junction to case thermal resistance diode parallel 0.46 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 300 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com downloaded from: http:///
APTM20AM06SG APTM20AM06SG C rev 3 october, 2012 www.microsemi.com 4-7 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 6v 7v 8v 0 200 400 600 800 1000 0 2.5 5 7.5 10 12.5 15 v ds , drain to source voltage (v) i d , drain current (a) v gs =15 & 10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 120 240 360 480 600 720 840 2345678910 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 0 100 200 300 400 500 600 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 44.5a 0 40 80 120 160 200 240 280 320 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTM20AM06SG APTM20AM06SG C rev 3 october, 2012 www.microsemi.com 5-7 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown volta g e ( normalized ) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 150a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 1 10 100 1000 10000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r dson single pulse t j =150c t c =25c ciss crss coss 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =40v v ds =100v v ds =160v 0 2 4 6 8 10 12 0 60 120 180 240 300 360 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =300a t j =25c downloaded from: http:///
APTM20AM06SG APTM20AM06SG C rev 3 october, 2012 www.microsemi.com 6-7 delay times vs current td (on) td (off) 10 20 30 40 50 60 70 80 90 100 150 200 250 300 350 400 450 500 i d , drain current (a) t d(on) and t d(off) (ns) v ds =133v r g =0.8 ? t j =125c l=100 h rise and fall times vs current t r t f 0 20 40 60 80 100 120 140 160 100 150 200 250 300 350 400 450 500 i d , drain current (a) t r and t f (ns) v ds =133v r g =0.8 ? t j =125c l=100h switching energy vs current e on e off 0 500 1000 1500 2000 2500 3000 3500 4000 100 150 200 250 300 350 400 450 500 i d , drain current (a) e on and e off (j) v ds =133v r g =0.8 ? t j =125c l=100 h e on e off e off 1000 2000 3000 4000 5000 6000 024681 0 gate resistance (ohms) switching energy (j) switching energy vs gate resistance v ds =133v i d =300a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 350 400 30 60 90 120 150 180 210 240 270 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =133v d=50% r g =0.8 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 10000 0.30.50.70.91.11.31.51.71.9 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage downloaded from: http:///
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